Passivation of boron in diamond by deuterium

被引：56

作者：

Zeisel, R ^{[1
]}

Nebel, CE ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 13期

关键词：

D O I：

10.1063/1.123698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance-voltage measurements have been performed on deuterated boron-doped synthetic-type IIb diamond. They demonstrate the electrical passivation of the boron acceptors, which was manifested by a persistent decrease in capacitance after deuteration. The capacitance-voltage dependence is explained by means of a two-layer depletion width model. (C) 1999 American Institute of Physics.

引用

页码：1875 / 1876

页数：2

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