Angle integrated photoemission study of SmO0.85F0.15FeAs

被引:13
作者
Ou Hong-Wei [1 ,2 ]
Zhao Jia-Feng [1 ,2 ]
Zhang Yan [1 ,2 ]
Shen Da-Wei [1 ,2 ]
Zhou Bo [1 ,2 ]
Yang Le-Xian [1 ,2 ]
He Cheng [1 ,2 ]
Chen Fei [1 ,2 ]
Xu Min [1 ,2 ]
Wu Tao [3 ,4 ]
Chen Xian-Hui [3 ,4 ]
Chen Yan [1 ,2 ]
Feng Dong-Lai [1 ,2 ]
机构
[1] Fudan Univ, Surface Phys Lab, Natl Key Lab, Dept Phys, Shanghai 200433, Peoples R China
[2] Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China
[3] Univ Sci & Technol China, Dept Phys, Anhua 230026, Peoples R China
[4] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Anhua 230026, Peoples R China
关键词
Electronic structure;
D O I
10.1088/0256-307X/25/6/083
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic structure of the new superconductor SmO1-xFxFeAs (x = 0.15) is studied by angle-integrated photoemission spectroscopy. Our data show a sharp feature very close to the Fermi energy, and a relative. at distribution of the density of states between 0.5eV and 3eV binding energy, which agrees well with the band structure calculations considering an antiferromagnetic ground state. No noticeable gap opening is observed at 12K below the superconducting transition temperature, indicating the existence of large ungapped regions in the Brillouin zone.
引用
收藏
页码:2225 / 2227
页数:3
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