Characterization of silicon-implanted SiO2 layers using positron annihilation spectroscopy

被引：4

作者：

Ghislotti, G

Nielsen, B

AsokaKumar, P

Lynn, KG

Szeles, C

Bottani, CE

Bertoni, S

Cerofolini, GF

Meda, L

机构：

[1] POLITECN MILAN,I-20133 MILAN,ITALY

[2] IST GUIDO DONEGANI SPA,I-28100 NOVARA,ITALY

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

关键词：

silicon; ion implantation; silicon dioxide; transmission electron microscopy;

D O I：

10.1016/0040-6090(95)08105-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon-implanted thermal SiO2 layers were studied using depth-resolved positron annihilation spectroscopy (PAS) and transmission electron microscopy (TEM). TEM observations show the presence of silicon nanocrystals (Si-nc) in the region between 200 nm and 300 nm. The defect annealing behavior is studied by means of PAS. For 1 000 degrees C annealed samples at a depth for which Si-nc are observed, a distinctive PAS signal is detected and ascribed to the Si-nc/SiO2 interface.

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收藏

页码：310 / 313

页数：4

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