New dicing and thinning concept improves mechanical reliability of ultra thin silicon

被引：43

作者：

Landesberger, C ^{[1
]}

Klink, G ^{[1
]}

Schwinn, G ^{[1
]}

Aschenbrenner, R ^{[1
]}

机构：

[1] Fraunhofer Inst Reliabil & Microintegrat, D-80686 Munich, Germany

来源：

INTERNATIONAL SYMPOSIUM ON ADVANCED PACKAGING MATERIALS: PROCESSES, PROPERTIES AND INTERFACES, PROCEEDINGS | 2001年

关键词：

wafer thinning; fracture tests; Dicing by Thinning; ultra thin chips;

D O I：

10.1109/ISAOM.2001.916555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra thin silicon ICs with a remaining thickness of less than 30 mum are investigated with respect to their manufacturing technology and mechanical behavior. Thin wafers which were diced using a standard sawing process reveal low fracture resistance when a bending force is applied to single chips. To eliminate influence of micro-cracks induced by sawing extremely thin wafers, the new concept "Dicing by Thinning" was developed and is explained in the paper. The concept allows manufacturing of 10 - 30 mum thin wafers and includes self-acting die separation during thinning procedure. Best results are achieved when dicing lines between chips are prepared at front side of wafer by dry etching methods. First results of analysing mechanical reliability of thin silicon samples are presented and discussed.

引用

页码：92 / 97

页数：6