Role of non-equilibrium carrier distributions in multi-quantum well InGaAsP based lasers

被引：3

作者：

Hybertsen, MS ^{[1
]}

Alam, MA ^{[1
]}

Baraff, GA ^{[1
]}

Grinberg, AA ^{[1
]}

Smith, RK ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2 | 1998年 / 3283卷

关键词：

semiconductor transport; telecommunications laser; semiconductor laser; quantum well;

D O I：

10.1117/12.316671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A microscopic model for the operation of multi-quantum well laser diodes is described. It includes bulk transport of carriers modeled by drift-diffusion equations, confined carriers in the quantum wells modeled by the Schroedinger equation, photon modes modeled by a Helmholtz equation and couplings described by rate equations. Application of this model shows that the carrier distribution in the active layer of the laser can not be described by quasi-equilibrium conditions. One consequence is the substantially non-uniform distribution of carriers among the quantum wells when the laser is biased above threshold. Another consequence is the observation of photoluminescence in wide area devices under short circuit conditions.

引用

页码：375 / 383

页数：3