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[1]
Atwater HA, 2010, NAT MATER, V9, P205, DOI [10.1038/nmat2629, 10.1038/NMAT2629]
Plasmonics for improved photovoltaic devices (vol 9, pg 205, 2010)
被引：217
作者：
Atwater, Harry A.
Polman, Albert
机构：
关键词：
D O I：
10.1038/nmat2866
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ;
081704 ;
摘要：
Nature Materials 9, 205–213 (2010); published online 19 February 2010; corrected online 1 September 2010. In Fig. 1a of the version of this Review originally published, the graph labelled '2-μm-thick Si wafer' is that for a 10-μm-thick Si wafer. The corrected figure is shown below. The original figure caption and descriptions in the text are correct.
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页码：865 / 865
页数：1
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