1.55 mu m vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/InP-GaAs/AlAs DBRs

被引：26

作者：

Ohiso, Y

Amano, C

Itoh, Y

Tateno, K

Tadokoro, T

Takenouchi, H

Kurokawa, T

机构：

[1] NTT Opto-electronics Lab, Kanagawa

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 16期

关键词：

vertical cavity surface emitting lasers; semiconductor junction lasers;

D O I：

10.1049/el:19960960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors propose a novel 1.55 mu m vertical-cavity surface emitting laser (VCSEL) structure with wafer-fused InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors. The resonant-cavity wavelength before water fusion is in exact accord with the emission wavelength, and a 25 mu m diameter VCSEL exhibits CW operation at 27 degrees C.

引用

页码：1483 / 1484

页数：2

共 5 条

[1] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS [J].