High temperature semiconductor sensor for the detection of fluorine

被引：40

作者：

Vasiliev, A

Moritz, W

Fillipov, V

Bartholomaus, L

Terentjev, A

Gabusjan, T

机构：

[1] Humboldt Universitat Berlin, Inst Phys Chem, D-10117 Berlin, Germany

[2] IV Kurchatov Atom Energy Inst, Russian Res Ctr, Moscow 123182, Russia

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 49卷 / 1-2期

关键词：

fluorine; lanthanum fluoride; silicon carbide;

D O I：

10.1016/S0925-4005(98)00041-0

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A chemical semiconductor sensor based on a silicon carbide substrate was investigated for the high temperature measurements of fluorine up to 350 degrees C. The use of the structure SiC/SiO2/LaF3/Pt at room temperature leads to results comparable to the silicon based sensor. The influence of the temperature on the sensor response time was smaller than expected but the increased desorption rate and a high signal to noise ratio improved the detection limit. An impulse method using the initial slope of the response curve was shown to be advantageous. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：133 / 138

页数：6

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