Spin dependent hopping and colossal negative magnetoresistance in epitaxial Nd0.52Sr0.48MnO3 films in fields up to 50 T

被引：155

作者：

Wagner, P ^{[1
]}

Gordon, I ^{[1
]}

Trappeniers, L ^{[1
]}

Vanacken, J ^{[1
]}

Herlach, F ^{[1
]}

Moshchalkov, VV ^{[1
]}

Bruynseraede, Y ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Vaste Stof Fys & Magnetisme Lab, B-3001 Louvain, Belgium

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.81.3980

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The low carrier mobility of the magnetic perovskite Nd0.52Sr0.48MnO3 implies that the dominant conductivity mechanism is related to Mott hopping. We propose a modification of Mott's original model by taking into account that the hopping barrier depends on the misorientation between the spins of electrons at an initial and a final state in an elementary hopping process. Using this model we deduce a negative-magnetoresistivity scaling proportional to the Brillouin function B in the ferromagnetic state and to B-2 in the paramagnetic state. Both predictions are in full agreement with the magnetoresistivity measured in pulsed magnetic fields up to 50 T. [S0031-9007(98)07410-9].

引用

页码：3980 / 3983

页数：4

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