Recent advances in high temperature, high frequency SiC devices

被引：21

作者：

Clarke, RC ^{[1
]}

Brandt, CD ^{[1
]}

Sriram, S ^{[1
]}

Siergiej, RR ^{[1
]}

Morse, AW ^{[1
]}

Agarwal, AK ^{[1
]}

Chen, LS ^{[1
]}

Balakrishna, V ^{[1
]}

Burk, AA ^{[1
]}

机构：

[1] Northrop Grumman Corp, Pittsburgh, PA 15235 USA

来源：

1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE | 1998年

关键词：

D O I：

10.1109/HTEMDS.1998.730637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon Carbide (SiC) is an emerging semiconductor which has proven itself especially well suited to high temperature power switching and high-frequency power generation. In this paper we examine recent advances in materials development and device performance In boule growth we have focused on increasing boule diameter and reducing defect counts. Two conductivity types have been developed, (1) Undoped semi-insulating for MESFETs and (2) nitrogen doped highly conducting boules, for SITs and power switches. Very uniform planetary multiwafer epitaxial layer growth on these wafers is described, in which specular epitaxial layers have been obtained with growth rates of 3-5 mu m/hr exhibiting unintentional n-type doping of similar to 1x10(15) cm(-3), and associated room temperature Hall mobilities of similar to 1000 cm(2)/Vs.Controlled n-type doping between similar to 5x10(15) cm(-3) and>1x10(19) cm(-3) has also been demonstrated using nitrogen doping. SiC finds application in high temperature power switching devices and microwave power transistors. MOS Torn-Off Thyristors (MTO(TM)),, being investigated as power switches because they offer: ease of turn-off, 500 degrees C operation and reduced cooling requirements. in the fabrication of high power,;high frequency transistors at UHF, L-band, S-band and X-Band SiC has been found superior to both silicon and GaAs. For example, a 4H-SiC UHF television module has demonstrated good signal fidelity at the 2000 Watt PEP level, S-Band transistors have shown 300 watts peak power for radar applications, and 6 Watts power output has been obtained at X-Band.

引用

页码：18 / 28

页数：11