Thermal diffusivities and conductivities of molten germanium and silicon

被引:31
作者
Nishi, T [1 ]
Shibata, H
Ohta, H
机构
[1] Tohoku Univ, Grad Sch, Dept Mat Proc, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
[3] Ibaraki Univ, Dept Mat Sci, Hitachi, Ibaraki 3168511, Japan
关键词
molten germanium; molten silicon; laser flash method; sample cell; thermal diffusivity; thermal conductivity; high temperature;
D O I
10.2320/matertrans.44.2369
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermal diffusivity values of molten germanium and silicon were measured by a laser flash method. Simple but useful sample cell systems were developed to keep the molten germanium and silicon shape uniform for a given thickness. In the present experimental condition, it is necessary to consider the effect of not only the radiative heat loss but also the conductive heat loss at the interface between the molten sample and the cell material under the present experimental conditions. However, the computer simulation results suggest that the conductive heat loss is found to be negligibly small. The thermal diffusivity values of molten germanium and silicon are given in the following equations (unit: m(2)/s). alpha(Ge) = 1.40 x 10(-8) (T - 1218) + 2.29 x 10(-5) 1218 less than or equal to T less than or equal to 1398 (unit: K) alpha(Si) = 4.48 x 10(-9) (T - 1685) + 2.23 x 10(-5) 1685 less than or equal to T less than or equal to 1705 (unit: K).
引用
收藏
页码:2369 / 2374
页数:6
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