Effects of partial substitution of Co by Ni on the high-temperature thermoelectric properties of TiCoSb-based half-Heusler compounds

被引:67
作者
Zhou, M [1 ]
Feng, CD [1 ]
Chen, LD [1 ]
Huang, XY [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金;
关键词
half-Heusler compounds; Seebeck coefficient; electrical conductivity; thermal conductivity;
D O I
10.1016/j.jallcom.2004.07.074
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
TiCoSb-based half-Heusler compounds were prepared by solid-state reaction and their thermoelectric properties were studied. The un-doped TiCoSb compound shows n-type conduction and demonstrates high Seebeck coefficient at high temperatures. The partial substitution of Co by Ni caused great increase in electron concentration and electrical conductivity, while the Seebeck coefficient and the thermal conductivity showed little change when Ni content (x) is below 5%. A maximum power factor of 16 mu W/K-2 cm and a maximum dimensionless figure of merit (ZT) of 0.27 have been obtained for the composition of TiCo0.95Ni0.05Sb at 900 K. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:194 / 197
页数:4
相关论文
共 19 条
[1]   GAP AT FERMI LEVEL IN SOME NEW D-ELECTRON AND F-ELECTRON INTERMETALLIC COMPOUNDS [J].
ALIEV, FG .
PHYSICA B, 1991, 171 (1-4) :199-205
[2]   GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN [J].
ALIEV, FG ;
BRANDT, NB ;
MOSHCHALKOV, VV ;
KOZYRKOV, VV ;
SKOLOZDRA, RV ;
BELOGOROKHOV, AI .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 75 (02) :167-171
[3]   Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1-xSbx [J].
Bhattacharya, S ;
Pope, AL ;
Littleton, RT ;
Tritt, TM ;
Ponnambalam, V ;
Xia, Y ;
Poon, SJ .
APPLIED PHYSICS LETTERS, 2000, 77 (16) :2476-2478
[4]   TiNiSn: A gateway to the (1,1,1) intermetallic compounds [J].
Cook, BA ;
Harringa, JL ;
Tan, ZS ;
Jesser, WA .
PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1996, :122-127
[5]   THE ABSOLUTE SCALE OF THERMOELECTRIC POWER AT HIGH TEMPERATURE [J].
CUSACK, N ;
KENDALL, P .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (467) :898-901
[6]   Efficient dopants for ZrNiSn-based thermoelectric materials [J].
Hohl, H ;
Ramirez, AP ;
Goldmann, C ;
Ernst, G ;
Wölfing, B ;
Bucher, E .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (07) :1697-1709
[7]   GAP AT THE FERMI LEVEL AND MAGNETISM IN RMSN TERNARY COMPOUNDS (R = TI, ZR, HF AND M + FE, CO, NI) [J].
KUENTZLER, R ;
CLAD, R ;
SCHMERBER, G ;
DOSSMANN, Y .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1992, 104 :1976-1978
[8]  
Lue CS, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.085121
[9]   Properties on request in semi-Heusler phases [J].
Pierre, J ;
Skolozdra, R ;
Tobola, J ;
Kaprzyk, S ;
Hordequin, C ;
Kouacou, MA ;
Karla, I ;
Currat, R ;
Lelievre-Berna, E .
JOURNAL OF ALLOYS AND COMPOUNDS, 1997, 262 :101-107
[10]  
Ponnambalam V., 1999, Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407), P340, DOI 10.1109/ICT.1999.843399