Fabrication of Cu2ZnSnS4 thin-film solar cell prepared by pulsed laser deposition

被引：179

作者：

Moriya, Katsuhiko ^{[1
]}

Tanaka, Kunihiko ^{[1
]}

Uchiki, Hisao ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Niigata 9402188, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 9A期

关键词：

Cu2ZnSnS4 (CZTS); plused laser deposition; thin-film solar cell;

D O I：

10.1143/JJAP.46.5780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thin-film solar cell based on a CU2ZnSnS4 (CZTS) absorber layer deposited by pulsed laser deposition has been fabricated with an Al:ZnO (n-type) window layer and a US buffer layer. Some peaks attributed to (112), (200), (220), and (312) planes of CZTS appeared in an X-ray diffraction pattern of a thin film. The composition of the film was Sn-rich and the band gap energy was approximately 1.5 eV. A CZTS film annealed at 500 degrees C in an atmosphere of N-2 had optical characteristics suitable for use in an absorber layer of a thin-film solar cell and was used for a solar cell. The CZTS thin-film solar cell with an active area of 0.092 cm(2) showed an open-circuit voltage of 546 mV, a short-circuit current of 6.78 mA/cm(2) a fill factor of 0.48, and a conversion efficiency of 1.74%.

引用

页码：5780 / 5781

页数：2

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