Temperature characteristics of a-Si:H gate ISFET

被引：14

作者：

Chou, JC ^{[1
]}

Wang, YF ^{[1
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Yunlin 640, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2001年 / 70卷 / 01期

关键词：

A-Si : H pH-ISFET; temperature effect; PECVD; I-V curve; pH sensitivity;

D O I：

10.1016/S0254-0584(00)00469-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we put emphasis on the study of the temperature effect of the ISFET (ion sensitive field effect transistor) based on the hydrogenated amorphous silicon (a-Si:H). Since the temperature influences the properties of the ISFET device, we studied the influence of the temperature effect to ISFET in detail. In this paper, we prepared the a-Si:H/SiO2/p-Si/Al structure of ISFET devices by plasma-enhanced chemical vapor deposition (PECVD). The thickness of the a-Si:H was 2000 Angstrom. Then we used epoxy to encapsulate the a-Si:H pH-ISFET device. Furthermore, we utilized Keithley 236 Semiconductor Parameter Analyzer to measure the I-V curve, and then pH sensitivity of the a-Si:H pH-ISFET was determined. Since the a-Si:H thin film is easily dissolved in alkaline solution, so it was measured in acid solutions between pH 1-7. The experimental results were also compared with the simulated results. We can conclude that the experimental results approximately agree with simulation results. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：107 / 111

页数：5

共 14 条

[1] ANALYSIS OF THE THRESHOLD VOLTAGE AND ITS TEMPERATURE-DEPENDENCE IN ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (EISFETS) [J].