Band-gap states and ferroelectric restoration in strontium bismuth tantalate

被引:6
作者
Li, B [1 ]
Koch, F
Chu, L
机构
[1] Tech Univ Munich, Dept Phys E16, D-85748 Garching, Germany
[2] Tech Univ Munich, Walter Schottky Inst, D-85747 Garching, Germany
关键词
D O I
10.1063/1.1347011
中图分类号
O59 [应用物理学];
学科分类号
摘要
By means of photoluminescence (PL) and sub-band-gap (sub-E-g) optical illumination, the degradation and restoration of ferroelectric properties in strontium bismuth tantalate thin films have been investigated, and the existence of band-gap states is demonstrated. It is shown that the suppression and recovery of ferroelectricity are closely correlated with the change of PL intensity, since both switchable polarization and PL are related to Ta5+ ions in the TaO6 octahedron. Furthermore, the electric-field-induced restoration increases dramatically by the aid of sub-band-gap light (2.5 eV less than or equal toh nu less than or equal toE(g)) illumination absorbed in band-gap states. (C) 2001 American Institute of Physics.
引用
收藏
页码:1107 / 1109
页数:3
相关论文
共 18 条
[1]   Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors [J].
Aggarwal, S ;
Perusse, SR ;
Nagaraj, B ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 1999, 74 (20) :3023-3025
[2]   Effect of hydrogen on Pb(Zr, Ti)O3-based ferroelectric capacitors [J].
Aggarwal, S ;
Perusse, SR ;
Tipton, CW ;
Ramesh, R ;
Drew, HD ;
Venkatesan, T ;
Romero, DB ;
Podobedov, VB ;
Weber, A .
APPLIED PHYSICS LETTERS, 1998, 73 (14) :1973-1975
[3]  
AlShareef HN, 1996, APPL PHYS LETT, V68, P690, DOI 10.1063/1.116593
[4]   Aging behavior and recovery of polarization in Sr0.8Bi2.4Ta2O9 thin films [J].
Chen, SY ;
Lee, VC .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (06) :3050-3055
[5]   Photoinduced changes in the fatigue behavior of SrBi2Ta2O9 and Pb(Zr,Ti)O-3 thin films [J].
Dimos, D ;
AlShareef, HN ;
Warren, WL ;
Tuttle, BA .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) :1682-1687
[6]   SURFACE ELECTRONIC PROPERTIES OF D-BAND PEROVSKITES - STUDY OF THE PI-BANDS [J].
ELLIALTIOGLU, S ;
WOLFRAM, T .
PHYSICAL REVIEW B, 1978, 18 (08) :4509-4525
[7]   ANOMALOUS PHOTOELECTRONIC PROCESSES IN SRTIO3 [J].
FENG, T .
PHYSICAL REVIEW B, 1982, 25 (02) :627-642
[8]  
Hendrix BC, 1999, MATER RES SOC SYMP P, V541, P275
[9]   Polarity-dependent rejuvenation of ferroelectric properties of integrated SrBi2Ta2O9 capacitors by electrical stressing [J].
Hong, SK ;
Hwang, CS ;
Kwon, OS ;
Kang, NS .
APPLIED PHYSICS LETTERS, 2000, 76 (03) :324-326
[10]   Degradation behavior in the remnant polarization of SrBi2Ta2O9 thin films by hydrogen annealing and its recovery by postannealing [J].
Kwon, OS ;
Hwang, CS ;
Hong, SK .
APPLIED PHYSICS LETTERS, 1999, 75 (04) :558-560