High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition

被引：132

作者：

Lee, CH ^{[1
]}

Sazonov, A ^{[1
]}

Nathan, A ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 22期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.1942641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited by using 13.56 MHz plasma-enhanced chemical vapor deposition at 260 degrees C by means of a silane (SiH4) plasma heavily diluted with hydrogen (H-2). The high-quality nc-Si:H film showed an oxygen concentration (C-O) of similar to 1.5x10(17) at./cm(3) and a dark conductivity (sigma(d)) of similar to 10(-6) S/cm, while the Raman crystalline volume fraction (X-c) was over 80%. Top-gate nc-Si:H thin-film transistors employing an optimized similar to 100 nm nc-Si:H channel layer exhibited a field-effect mobility (mu(FE)) of similar to 150 cm(2)/V s, a threshold voltage (V-T) of similar to 2 V, a subthreshold slope (S) of similar to 0.25 V/dec, and an ON/OFF current ratio of similar to 10(6). (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 17 条

[1] Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique [J].

Cabarrocas, PRI ;

Brenot, R ;

Bulkin, P ;

Vanderhaghen, R ;

Drévillon, B ;

French, I .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :7079-7082

[2] Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C [J].

Cheng, IC ;

Wagner, S .

APPLIED PHYSICS LETTERS, 2002, 80 (03) :440-442

[3] Electric-field-enhanced crystallization of amorphous silicon [J].

Jang, J ;

Oh, JY ;

Kim, SK ;

Choi, YJ ;

Yoon, SY ;

Kim, CO .

NATURE, 1998, 395 (6701) :481-483

[4] A significant reduction of impurity contents in hydrogenated microcrystalline silicon films for increased grain size and reduced defect density [J].

Kamei, T ;

Kondo, M ;

Matsuda, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3A) :L265-L268

[5] Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution [J].

Kroll, U ;

Meier, J ;

Shah, A ;

Mikhailov, S ;

Weber, J .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) :4971-4975

[6] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA [J].

MATSUDA, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :767-774

[7] INSITU CHEMICALLY CLEANING POLY-SI GROWTH AT LOW-TEMPERATURE [J].

NAGAHARA, T ;

FUJIMOTO, K ;

KOHNO, N ;

KASHIWAGI, Y ;

KAKINOKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4555-4558

[8] Passivation of oxygen-related donors in microcrystalline silicon by low temperature deposition [J].

Nasuno, Y ;

Kondo, M ;

Matsuda, A .

APPLIED PHYSICS LETTERS, 2001, 78 (16) :2330-2332

[9]

NATHAN A, 2004, THIN FILM MAT PROCES, V1, pCH3

[10] Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane [J].

Platz, R ;

Wagner, S .

APPLIED PHYSICS LETTERS, 1998, 73 (09) :1236-1238

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