Ultra shallow junction formation by RTA at high temperature for short heating cycle time

被引：15

作者：

Saito, S ^{[1
]}

Shishiguchi, S ^{[1
]}

Mineji, A ^{[1
]}

Matsuda, T ^{[1
]}

机构：

[1] NEC, ULSI Device Dev Labs, Sagamihara, Kanagawa 2291198, Japan

来源：

SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING | 1998年 / 532卷

关键词：

D O I：

10.1557/PROC-532-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In accordance with decrease of device size, ultra shallow junctions are required for realizing superior device performance. Enhanced diffusion caused by implantation is a crucial factor to realize ultra shallow junctions. Not only implant but also RTA conditions are key factors to suppress enhanced diffusion. In this paper, process conditions to minimize enhanced diffusion are discussed. Implant ion species, energy, dose and beam current parameters are investigated for implantation and temperature, time and ramping rate parameters are investigated for RTA. Important result is that optimization of not only implant but also RTA conditions should be carried out in order to fabricate ultra shallow junctions.

引用

页码：3 / 11

页数：9