Influence of the Intermediate Density-of-States Occupancy on Open-Circuit Voltage of Bulk Heterojunction Solar Cells with Different Fullerene Acceptors

被引：143

作者：

Garcia-Belmonte, Germa ^{[1
]}

Boix, Pablo P. ^{[1
]}

Bisquert, Juan ^{[1
]}

Lenes, Martijn ^{[2
]}

Bolink, Henk J. ^{[2
]}

La Rosa, Andrea ^{[3
,4
]}

Filippone, Salvatore ^{[3
,4
]}

Martin, Nazario ^{[3
,4
]}

机构：

[1] Univ Jaume 1, Dept Fis, Photovolta & Optoelect Devices Grp, Castellon de La Plana 12071, Spain

[2] Univ Valencia, Inst Ciencia Mol, Valencia 46071, Spain

[3] Univ Complutense Madrid, Fac Quim, Dept Quim Organ, E-28040 Madrid, Spain

[4] IMDEA Nanociencia, Madrid 28049, Spain

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2010年 / 1卷 / 17期

关键词：

CHARGE-TRANSFER STATES; POLYMER; SEMICONDUCTORS; BLENDS; ENERGY; MODEL; EFFICIENCIES; GENERATION;

D O I：

10.1021/jz100956d

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electron density of states (DOS) and recombination kinetics of bulk heterojunction solar cells consisting of a poly(3-hexylthiophene) (P3HT) donor and two fullerene acceptors, either [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) or 4,4'-dihexyloxydiphenylmethano[60]fullerene (DPM(6)), have been determined by means of impedance spectroscopy. The observed difference of 125 mV in the output open circuit voltage is attributed to significant differences of the occupancy of the DOS in both fullerenes. Whereas DPM(6) exhibits a full occupation of the electronic band, occupancy is restricted to the tail of the DOS in the case of PCBM-based devices, implying a higher rise of the Fermi level in the DPM(6) fullerene. Carrier lifetime describes a negative exponential dependence on the open.. circuit voltage, exhibiting values on the microsecond scale at 1 sun illumination.

引用

页码：2566 / 2571

页数：6

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