Advanced lifetime control for reducing turn-off switching losses of 4.5 kV IEGT devices

被引：4

作者：

Eicher, S ^{[1
]}

Ogura, T ^{[1
]}

Sugiyama, K ^{[1
]}

Ninomiya, H ^{[1
]}

Ohashi, H ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To decrease the switching losses and improve the trade-off between conduction and switching losses, local lifetime control by proton irradiation is applied to IEGT devices. However, the maximum amount of lifetime reduction is limited by the phenomenon of negative resistance in the I-V characteristic, which causes problems if paralleling the devices. In this paper, we propose an analytical treatment of the phenomenon of negative resistance and propose lifetime profiles, which allow the operation of IEGT devices with significantly reduced turn-off losses, while maintaining a smooth I-V characteristic without negative resistance.

引用

页码：39 / 42

页数：4