Rare earth-doped alumina thin films deposited by liquid source CVD processes

被引:19
作者
Deschanvres, JL
Meffre, W
Joubert, JC
Senateur, JP
Robaut, F
Broquin, JE
Rimet, R
机构
[1] Ecole Natl Super Phys Grenoble, Mat & Genie Phys Lab, CNRS, F-38402 St Martin Dheres, France
[2] Inst Natl Polytech Grenoble, Consortium Moyens Technol Communs, F-38402 St Martin Dheres, France
[3] Ecole Natl Super Elect & Radioelect Grenoble, CNRS, Lab Electromagnetisme Microondes & Optoelect, F-38016 Grenoble, France
关键词
thin films; CVD; rare earth; alumina; integrated optics;
D O I
10.1016/S0925-8388(98)00433-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 [物理化学]; 081704 [应用化学];
摘要
Two types of liquid-source CVD processes are proposed for the growth of rare earth-doped alumina thin films suitable as amplifying media for integrated optic applications. Amorphous, transparent, pure and erbium- or neodymium-doped alumina films were deposited between 573 and 833 K by atmospheric pressure aerosol CVD. The rare earth doping concentration increases by decreasing the deposition temperature. The refractive index of the alumina films increases as a function of the deposition temperature from 1.53 at 573 K to 1.61 at 813 K. Neodymium-doped films were also obtained at low pressure by liquid source injection CVD. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:742 / 745
页数:4
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