Progress in up-scaling of thin film silicon solar cells by large-area PECVD KAI systems

被引：17

作者：

Meier, J ^{[1
]}

Kroll, U ^{[1
]}

Spitznagel, J ^{[1
]}

Benagli, S ^{[1
]}

Roschek, T ^{[1
]}

Pfanner, G ^{[1
]}

Ellert, C ^{[1
]}

Androutsopoulos, G ^{[1
]}

Hügli, A ^{[1
]}

Nagel, M ^{[1
]}

Bucher, C ^{[1
]}

Feitknecht, L ^{[1
]}

Büchel, G ^{[1
]}

Büchel, A ^{[1
]}

机构：

[1] Unaxis SPTec, CH-2000 Neuchatel, Switzerland

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488418

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

UNAXIS KAI PECVD reactors developed for AM LCD technology have been demonstrated to possess a high potential for thin film silicon solar cells based on amorphous and microcrystalline silicon. For the next generation of thin film modules with highly effective light-trapping LP-CVD ZnO large-area deposition is developed at Unaxis as well, in combination with a very simple but effective back reflector concept. A first prototype module of 0.447 m(2) active area with 7.1 % initial efficiency has been achieved for amorphous silicon. Micromorph mini-modules were prepared with 9.3 % initial aperture efficiency. All important module fabrication steps are under development at Unaxis for a complete line concept.

引用

页码：1464 / 1467

页数：4

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