Multilayer resist methods for nanoimprint lithography on nonflat surfaces

被引：72

作者：

Sun, XY ^{[1
]}

Zhuang, L ^{[1
]}

Zhang, W ^{[1
]}

Chou, SY ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, NanoStruct Lab, Princeton, NJ 08544 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Five multilayer resist methods (three positive tones and two negative tones) have been devised for nanoimprint lithography on nonflat surfaces. Three of the methods have been demonstrated experimentally on a SiO2 surface with 100 nm deep sharp steps. The advantages and disadvantages of each method are discussed. Our results should be applicable to nanoimprint lithography with in. nm feature size on nonflat surfaces. (C) 1998 American Vacuum Society. [S0734-211X(98)10106-3].

引用

页码：3922 / 3925

页数：4

共 4 条

[1] Imprint lithography with 25-nanometer resolution
Chou, SY
Krauss, PR
Renstrom, PJ
[J]. SCIENCE, 1996, 272 (5258) : 85 - 87
[2] Sub-10 nm imprint lithography and applications
Chou, SY
Krauss, PR
Zhang, W
Guo, LJ
Zhuang, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2897 - 2904
[3] IMPRINT OF SUB-25 NM VIAS AND TRENCHES IN POLYMERS
CHOU, SY
KRAUSS, PR
RENSTROM, PJ
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (21) : 3114 - 3116
[4] SPERLING LH, 1992, INTRO PHYSICAL POLYM, P352

← 1 →