Interface electronic properties of organic molecular semiconductors

被引：15

作者：

Hill, IG ^{[1
]}

Kahn, A ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

ORGANIC LIGHT-EMITTING MATERIALS AND DEVICES II | 1998年 / 3476卷

关键词：

organic molecular semiconductors; metal/organic interfaces; organic/organic heterojunctions; photoemission spectroscopy; interface dipole barriers;

D O I：

10.1117/12.332610

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

The electronic structure and chemical properties of organic/organic and organic/metal interfaces involving molecular semiconductors are investigated via photoemission spectroscopy. The alignment of electronic levels, electron and hole injection barriers, and interface dipoles are measured for each interface. Chemical reactions and interdiffusion dominate metal-on-organic contacts, whereas organic-on-metal and organic/organic interfaces are more abrupt. The rule of vacuum level alignment, expected to hold for organic molecular interfaces, breaks down for all metal/organic and several organic/organic interfaces, showing that electronic gap states and other interface effects cannot be neglected at these interfaces.

引用

页码：168 / 177

页数：10

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