A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM

被引：24

作者：

Han, Jin-Woo ^{[1
]}

Ryu, Seong-Wan ^{[1
]}

Kim, Sungho ^{[1
]}

Kim, Chung-Jin ^{[1
]}

Ahn, Jae-Hyuk ^{[1
]}

Choi, Sung-Jin ^{[1
]}

Kim, Jin Soo ^{[2
]}

Kim, Kwang Hee ^{[2
]}

Lee, Gi Sung ^{[2
]}

Oh, Jae Sub ^{[2
]}

Song, Myeong Ho ^{[2
]}

Park, Yun Chang ^{[2
]}

Kim, Jeoung Woo ^{[2
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Div Elect Engn, Taejon 305701, South Korea

[2] Natl Nanofab Ctr, Taejon 205806, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 06期

关键词：

bulk FinFET; capacitorless DRAM; FinFET; nonvolatile memory (NVM); SONOS; unified-RAM (URAM); 1T-DRAM;

D O I：

10.1109/LED.2008.922142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the IT-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers a cost-effective and fully compatible process with a conventional FinFET SONOS, and it also expedites heat dissipation. Highly reliable NVM and high-speed 1T-DRAM operation are confirmed, and it was also verified that there is no disturbance between the two memory functions.

引用

页码：632 / 634

页数：3

共 6 条

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