Surface electronic band structure and (A)over-bar surface state lifetimes at the Be(10(1)over-bar-0) surface:: Experiment and theory -: art. no. 205401

被引:15
作者
Balasubramanian, T [1 ]
Johansson, LI
Glans, PA
Virojanadara, C
Silkin, VM
Chulkov, EV
Echenique, PM
机构
[1] Lund Univ, MAX Lab, S-22100 Lund, Sweden
[2] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
[3] Donostia Int Phys Ctr, San Sebastian 20018, Basque Country, Spain
[4] Univ Basque Country, Euskal Herriko Unibertsitatea, Fac Ciencias Quim, Dept Fis, San Sebastian 20018, Basque Country, Spain
[5] Univ Basque Country, Euskal Herriko Unibertsitatea, Fac Ciencias Quim, Ctr Mixto CSIC UPV EHU, San Sebastian 20018, Basque Country, Spain
关键词
D O I
10.1103/PhysRevB.64.205401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface electronic band structure of the Be(10(1) over bar 0) surface is experimentally determined by angle-resolved photoemission and calculated by using density-functional theory. The experimental results agree well with the calculations, except for the fact that we were only able to resolve three surface states in the gap at (L) over bar, instead of four as predicted by the calculations. Through the temperature-dependent study, the phonon contribution subtracted width (h times inverse lifetime) of the shallow surface state at (A) over bar is found to be 51 +/- 8 meV. This is compared with the electron-electron interaction contribution to the width (53 meV) of the shallow surface state at A obtained from model potential calculations.
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页数:7
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