Improved electron-beam patterning of Si with self-assembled monolayers

A set of processes has been explored that enhance a the utility of self-assembled-monolayer electron-beam resists for patterning silicon. A self-assembled monolayer resist of octadecylsiloxane was exposed using a scanning electron microscope with a 20 keV beam energy and dose of 320 mu C/cm(2). After the patterned monolayer was developed using ultraviolet Light and ozone, it served as a wet etch mask for the underlying native oxide. Linewidths of similar to 30 nm were etched in silicon using the patterned oxide asa reactive ion etch mask. The maximum etch depth achieved in silicon was 90 nm using this process. (C) 1996 American Institute of Physics.