Epitaxial growth and magnetic behavior of NiFe2O4 thin films

被引：99

作者：

Venzke, S ^{[1
]}

vanDover, RB ^{[1
]}

Phillips, JM ^{[1
]}

Gyory, EM ^{[1
]}

Siegrist, T ^{[1
]}

Chen, CH ^{[1
]}

Werder, D ^{[1
]}

Fleming, RM ^{[1
]}

Felder, RJ ^{[1
]}

Coleman, E ^{[1
]}

Opila, R ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF MATERIALS RESEARCH | 1996年 / 11卷 / 05期

关键词：

D O I：

10.1557/JMR.1996.0153

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of NiFe2O4 were deposited on SrTiO3 (001) and Y0.15Zr0.85O2 (yttria-stabilized zirconia) (001) and (011) substrates by 90 degrees-off-axis sputtering. Ion channeling, x-ray diffraction, and transmission electron microscopy studies reveal that films grown at 600 degrees C consist of similar to 300 Angstrom diameter grains separated by thin regions of highly defective or amorphous material. The development of this microstructure is attributed to the presence of rotated or displaced crystallographic domains and is comparable to that observed in other materials grown on mismatched substrates (e.g., GaAs/Si or Ba2YCu3O7/MgO). Postdeposition annealing at 1000 degrees C yields films that are essentially single crystal. The magnetic properties of the films are strongly affected by the structural changes; unannealed films are not magnetically saturated even in an applied field of 55 kOe, while the annealed films have properties comparable to those of bulk, single crystal NiFe2O4. Homoepitaxial films grown at 400 degrees C also are essentially single crystal.

引用

页码：1187 / 1198

页数：12

共 24 条

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