Conductance oscillations in overgrown sub100nm InP/Ga0.25In0.75As quantum wires

被引：2

作者：

Maximov, I

Carlsson, N

Omling, P

Ramvall, P

Samuelson, L

Seifert, W

Wang, Q

Lourdudoss, S

Messmer, ER

Forchel, A

Kerkel, K

机构：

[1] Univ Lund, S-22100 Lund, Sweden

[2] KTH Electrum, Dept Elect, S-16440 Kista, Sweden

[3] Univ Wurzburg, Lehrstuhl Tech Phys, D-97074 Wurzburg, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 8A期

关键词：

D O I：

10.1088/0268-1242/13/8A/021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the observation of strong conductance oscillations as a function of Fermi energy in the quantized plateau region in epitaxially overgrown, heterostructurally defined, 90 nm wide InP/Ga0.25In0.75As quantum wires (QWRs). The oscillations are strong at liquid-helium temperatures but disappear either at temperatures around 10 K or if the excitation current is increased to 350 nA, We propose that the observed oscillations are caused by quantum interference of electron waves reflected at the sharp boundaries between the quantum wire and the wide 2DEG, defined by the heterostructure. Details of the fabrication of QWRs as narrow as 60 nm are also reported.

引用

页码：A67 / A70

页数：4

共 13 条

[1] ELECTRONIC TRANSPORT THROUGH VERY SHORT AND NARROW CHANNELS CONSTRICTED IN GAAS BY HIGHLY RESISTIVE GA-IMPLANTED REGIONS [J].