Superconductivity, critical current density, and flux pinning in MgB2-x(SiC)x/2 superconductor after SiC nanoparticle doping

被引:91
作者
Dou, SX
Pan, AV
Zhou, S
Ionescu, M
Wang, XL
Horvat, J
Liu, HK
Munroe, PR
机构
[1] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia
[2] Univ New S Wales, Electron Microscopy Unit, Sydney, NSW 2052, Australia
关键词
D O I
10.1063/1.1586467
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the effect of SiC nanoparticle doping on the crystal lattice structure, critical temperature T-c, critical current density J(c), and flux pinning in MgB2 superconductor. A series of MgB2-x(SiC)(x/2) samples with x = 0-1.0 were fabricated using an in situ reaction process. The contraction of the lattice and depression of T-c with increasing SiC doping level remained rather small most likely due to the counterbalancing effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intragrain defects and highly dispersed nanoinclusions within the grains which can act as effective pinning centers for vortices, improving J(c) behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB2-x(SiC)(x/2) superconductors. (C) 2003 American Institute of Physics.
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收藏
页码:1850 / 1856
页数:7
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