Continuous-wave operation of InGaN multiple quantum well laser diodes on copper substrates obtained by laser lift-off

被引:1
作者
Kneissl, M [1 ]
Wong, WS [1 ]
Romano, LT [1 ]
Treat, DW [1 ]
Schmidt, T [1 ]
Teepe, M [1 ]
Johnson, NM [1 ]
机构
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
来源
2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2000年
关键词
D O I
10.1109/ISLC.2000.882311
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:107 / 108
页数:2
相关论文
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[1]   Damage-free separation of GaN thin films from sapphire substrates [J].
Wong, WS ;
Sands, T ;
Cheung, NW .
APPLIED PHYSICS LETTERS, 1998, 72 (05) :599-601