Zinc-blende MnTe(111) on BaF2(111) substrates for optical measurements

被引：17

作者：

Janik, E ^{[1
]}

Dynowska, E ^{[1
]}

BakMisiuk, J ^{[1
]}

Domagala, J ^{[1
]}

Kutrowski, M ^{[1
]}

Wojtowicz, T ^{[1
]}

Stachow, A ^{[1
]}

机构：

[1] UNIV WARSAW,INST EXPTL PHYS,PL-00681 WARSAW,POLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 26期

关键词：

D O I：

10.1063/1.116620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of MnTe having zinc-blende structure were grown on BaF2(111) substrates under various growth conditions by molecular beam epitaxy. The structural properties of the deposited films were characterized by x-ray diffraction which evidenced sometimes the presence of other crystallographic phases apart from a dominating zinc-blende-like phase. Detailed measurements of symmetrical and asymmetrical reflections showed that the unit cell of (111) MnTe is not cubic, as is the case of epitaxial (001) MnTe, but it is distorted to an orthorhombic one. The transparent BaF2 substrates enabled optical measurements in transmission, thus, permitting a study of the band structure of the material in the vicinity of its fundamental band gap. (C) 1996 American Institute of Physics.

引用

页码：3796 / 3798

页数：3

共 14 条

[1] CONTROL OF THE CRYSTAL ORIENTATION OF ZINCBLENDE MNTE EPITAXIAL-FILMS GROWN ON GAAS [J].