Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells

被引：21

作者：

Jiang, CS ^{[1
]}

Friedman, DJ ^{[1
]}

Geisz, JF ^{[1
]}

Moutinho, HR ^{[1
]}

Romero, MJ ^{[1
]}

Al-Jassim, MM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 08期

关键词：

D O I：

10.1063/1.1602575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Distributions of built-in potential in GaInP2/GaAs tandem-junction solar cells were investigated by scanning Kelvin probe microscopy. Two states of potential distribution resulting from flattening of band bending and charge accumulation on either the top or bottom p-n junction were observed under short circuit, depending on the illumination spectra. With an external bias voltage, the voltage change always happened on the junction with the charge accumulation, and the potential distribution between the two states became less sensitive to illumination spectra. (C) 2003 American Institute of Physics.

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页码：1572 / 1574

页数：3

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