Thermoelectric properties of β-Zn4Sb3 doped with Sn

被引：32

作者：

Koyanagi, T ^{[1
]}

Hino, K ^{[1
]}

Nagamoto, Y ^{[1
]}

Yoshitake, H ^{[1
]}

Kishimoto, K ^{[1
]}

机构：

[1] Yamaguchi Univ, Fac Engn, Dept Elect & Elect Engn, Ube, Yamaguchi 755, Japan

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.667186

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

We have tried to dope beta-Zn4Sb3 with Sn for the purpose of the p-type doping and the enhancement of phonon scattering, which further improve the thermoelectric properties of beta-Zn4Sb3. Polycrystalline samples doped with Sn were prepared by the spark plasma sintering method Although no other phase was observed except for beta-Zn4Sb3 in Sn-doped samples up to 3%, their lattice constants were not at all changed from that of bulk beta-Zn4Sb3, indicating that Sn was not unfortunately substituted for Sb. These results suggest that microcrystals of Sn is dispersed in grain boundary regions of beta-Zn4Sb3. The Seebeck coefficient was almost unchanged and the electrical conductivity was slightly decreased by doping beta-Zn4Sb3 with Sn, indicating that Sn dose not act as a dopant. On the other hand, the thermal conductivity was lowered from 8.66 mW/cmK of the non-doped sample to 6.88 mW/cmK of the 3% Sn-doped sample at room temperature. This lowering of the thermal conductivity was considered to be due to the point defect phonon scattering induced by inclusions of Sn.

引用

页码：463 / 466

页数：4