Progress towards a high-resolution x-ray photon counter

被引:2
作者
Apte, RB
Nickel, N
Street, RA
Weisfield, R
Wu, JXD
Ready, S
Nguyen, M
Nylen, P
机构
来源
AMORPHOUS SILICON TECHNOLOGY - 1996 | 1996年 / 420卷
关键词
D O I
10.1557/PROC-420-177
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Progress towards x-ray shot-noise limited imaging with resolution superior to film is reported for a large format amorphous silicon imaging system containing 1536x1920 pixels. Improvements over previous work include the development of a complete system, the use of charge-sensitive amplifiers, and careful control of extrinsic noise. A charge-sensitive amplifier with 1000:1 dynamic range is used to detect the signal in the presence of a large parasitic capacitance, 95pF, which both increases the intrinsic noise in the amplifier and technical noise coupled from other sources. The RMS noise level, 4200 e, is within two octaves of single x-ray counting.
引用
收藏
页码:177 / 181
页数:5
相关论文
empty
未找到相关数据