Fluorocarbon dielectrics via hot filament chemical vapor deposition

被引：35

作者：

Lau, KKS ^{[1
]}

Murthy, SK ^{[1
]}

Lewis, HGP ^{[1
]}

Caulfield, JA ^{[1
]}

Gleason, KK ^{[1
]}

机构：

[1] MIT, Dept Chem Engn, Cambridge, MA 02139 USA

来源：

JOURNAL OF FLUORINE CHEMISTRY | 2003年 / 122卷 / 01期

基金：

美国国家卫生研究院; 美国国家科学基金会;

关键词：

hot filament chemical vapor deposition; fluorocarbon polymerization; fluorosilicone copolymerization; dielectric films;

D O I：

10.1016/S0022-1139(03)00099-X

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Fully dense fluorocarbon films can have dielectric constants (kappa) of less than 2.0. By eliminating the use of plasma excitation, hot filament chemical vapor deposition (HFCVD) permits the deposition of porous fluorocarbon films having even lower dielectric constants. HFCVD also offers the ability to tailor film chemistry. Linear-CF2-chain structures can be specifically initiated, producing well-defined functional groups at the chain ends and film growth rates in excess of I mum/min. Selectively copolymerization with other monomers is also possible via HFCVD. The HFCVD process can be scaled up for deposition onto large diameter substrates. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：93 / 96

页数：4

共 17 条

[1]

[Anonymous], INT TECHNOLOGY ROADM

[2]

KENNEDY RC, 1976, J FLUORINE CHEM, V7, P101

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