SiGeC/Si superlattice microcoolers

被引：196

作者：

Fan, XF ^{[1
]}

Zeng, GH

LaBounty, C

Bowers, JE

Croke, E

Ahn, CC

Huxtable, S

Majumdar, A

Shakouri, A

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] HRL Labs, LLC, Malibu, CA 90265 USA

[3] CALTECH, Pasadena, CA 91125 USA

[4] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

[5] Univ Calif Santa Cruz, Baskin Sch Engn, Santa Cruz, CA 95064 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 11期

关键词：

D O I：

10.1063/1.1356455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monolithically integrated active cooling is an attractive way for thermal management and temperature stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si substrates by molecular beam epitaxy. Thermal conductivity was measured by the 3 omega method. SiGeC/Si superlattice microcoolers with dimensions as small as 40x40 mum(2) were fabricated and characterized. Cooling by as much as 2.8 and 6.9 K was measured at 25 degreesC and 100 degreesC, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm(2). (C) 2001 American Institute of Physics.

引用

页码：1580 / 1582

页数：3

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