Fabrication and characterization of spin-on silica xerogel films

被引：8

作者：

Nitta, S ^{[1
]}

Jain, A ^{[1
]}

Pisupatti, V ^{[1
]}

Gill, WN ^{[1
]}

Wayner, PC ^{[1
]}

Plawsky, JL ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Chem Engn, Troy, NY 12180 USA

来源：

LOW-DIELECTRIC CONSTANT MATERIALS IV | 1998年 / 511卷

关键词：

D O I：

10.1557/PROC-511-99

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Xerogel films of high porosity were fabricated using an ambient pressure technique. The same porosity can be obtained with different microstructures by varying the aging time of the films. The dielectric constant of these films as a function of porosity at 1 MHz follows correlations originally developed for bulk aerogels. Diffusion of copper is orders of magnitude faster in these xerogels than in the corresponding thermal oxide. An activation energy of 0.9 eV was estimated based on a convective diffusion model.

引用

页码：99 / 104

页数：6