Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying

被引：64

作者：

Patriarche, Gilles ^{[1
]}

Glas, Frank ^{[1
]}

Tchernycheva, Maria ^{[1
]}

Sartel, Corinne ^{[1
]}

Largeau, Ludovic ^{[1
]}

Harmand, Jean-Christophe ^{[1
]}

Cirlin, George E. ^{[2
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Russian Acad Sci Res & Educ, St Petersburg Phys Tech Ctr, St Petersburg 195220, Russia

来源：

NANO LETTERS | 2008年 / 8卷 / 06期

关键词：

D O I：

10.1021/nl080319y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We bury vertical free-standing core-shell GaAs/AIGaAs nanowires by a planar GaAs overgrowth. As the nanowires get buried, their crystalline structure progressively transforms: whereas the upper emerging part retains its initial wurtzite structure, the buried part adopts the zinc blende structure of the burying layer. The burying process also suppresses all the stacking faults that existed in the wurtzite nanowires. We consider two possible mechanisms for the structural transition upon burying, examine how they can be discriminated from each other, and explain why the transition is favorable. © 2008 American Chemical Society.

引用

页码：1638 / 1643

页数：6

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