Interaction between magnetic layers in structures with narrow-gap IV-VI semiconductors

被引：19

作者：

Dugaev, VK

Litvinov, VI

Dobrowolski, W

Story, T

机构：

[1] Inst Mat Sci Problems, Chernovtsy Dept, UA-274001 Chernovtsy, Ukraine

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 110卷 / 06期

关键词：

semiconductors; nanostructure; quantum wells;

D O I：

10.1016/S0038-1098(98)00609-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting TV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures. (C) 1999 Elsevier Science Ltd. All rights reserved.

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页码：351 / 355

页数：5

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