Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement

被引:9
作者
Kang, DH
Zhirnov, VV
Wojak, GJ
Preble, EA
Choi, WB
Hren, JJ
Cuomo, JJ
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] Inst Crystallog, Moscow 117333, Russia
[3] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 02期
关键词
D O I
10.1116/1.590608
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of the aluminum nitride coating thickness on molybdenum emitter tips were investigated by an in situ I-V measurement technique inside a typical magnetron sputtering system. ALN was deposited on Mo tips using a de-modulated 1 kW power source at 200 degrees C. Each I/V measurement was carried out immediately following a 15 a ALN deposition. Significantly improved field emission was observed as well as a strong emission thickness dependence, which we attribute to the influence of space charge. (C) 1999 American Vacuum Society. [S0734-211X(99)04002-0].
引用
收藏
页码:632 / 634
页数:3
相关论文
共 7 条
[1]   Field emission from undoped and nitrogen-doped tetrahedral amorphous carbon film prepared by filtered cathodic vacuum arc technique [J].
Cheah, LK ;
Shi, X ;
Tay, BK ;
Silva, SRP ;
Sun, Z .
DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) :640-644
[2]   FIELD ELECTRON-EMISSION STUDIES ON ZINC-OXIDE COATED TUNGSTEN MICROEMITTERS [J].
MOUSA, MS .
SURFACE SCIENCE, 1992, 266 (1-3) :110-120
[3]   (Negative) electron affinity of AlN and AlGaN alloys [J].
Nemanich, RJ ;
Benjamin, MC ;
Bozeman, SP ;
Bremser, MD ;
King, SW ;
Ward, BL ;
Davis, RF ;
Chen, B ;
Zhang, Z ;
Bernholc, J .
GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 :777-788
[4]  
Wojak GJ, 1997, IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, P146
[5]  
WOJAK GJ, 1996, 9 INT VAC MICR C 7 1, P217
[6]   Diamond coated Si and Mo field emitters: Diamond thickness effect [J].
Zhirnov, VV ;
Choi, WB ;
Cuomo, JJ ;
Hren, JJ .
APPLIED SURFACE SCIENCE, 1996, 94-5 :123-128
[7]   Wide band gap materials for field emission devices [J].
Zhirnov, VV ;
Wojak, GJ ;
Choi, WB ;
Cuomo, JJ ;
Hren, JJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03) :1733-1738