Sputtering deposition of amorphous cadmium stannate as transparent conducting oxide

被引:9
作者
Baratto, C. [1 ,2 ]
Ponzoni, A. [1 ,2 ]
Ferroni, M. [1 ,2 ]
Borgese, L. [3 ,4 ]
Bontempi, E. [3 ,4 ]
Sberveglieri, G. [1 ,2 ]
机构
[1] CNR IDASC SENSOR Lab, I-25133 Brescia, Italy
[2] Univ Brescia, Dept Chem & Phys, I-25133 Brescia, Italy
[3] Univ Brescia, INSTM, Dept Mech & Ind Engn, I-25133 Brescia, Italy
[4] Univ Brescia, Chem Technol Lab, Dept Mech & Ind Engn, I-25133 Brescia, Italy
关键词
Cadmium stannate; Transparent conducting oxide; Sheet resistance; Transmittance; Amorphous semiconductor; Ilmenite; FILM SOLAR-CELLS; THIN-FILMS; CD2SNO4;
D O I
10.1016/j.tsf.2011.11.079
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work we studied deposition conditions by RF sputtering of ternary oxides of Cd and Sn, starting from Cd2SnO4 target and varying substrate temperature, sputtering power and deposition gas (from inert Ar to oxidizing 50% Ar-50% O-2 atmosphere). The aim of this study was to obtain thin films for use as Transparent Conducting Oxide (TCO). TCOs are oxides that couples low sheet resistance and high transparency that find application in many fields like solar cells, light emitting diodes and transparent thin film transistors. Thin films functional properties were characterised by means of sheet resistance and transmittance measurements in the visible region, and film composition and structure were investigated by total reflection X ray fluorescence and glancing incidence X ray diffraction. Morphology was studied by Atomic Force Microscopy and Scanning Electron Microscope and showed very smooth surface suitable for solar cells application. Composition and phase analysis allowed us to discuss possible correlation of film structure with functional properties. Deposition in inert atmosphere at 400 degrees C substrate temperature was selected for its low sheet resistance and high transparency that are comparable to the ones of commercial TCOs like indium tin oxide or SnO2: F. The thin film obtained in these conditions was amorphous, and it crystallized into CdSnO3 ilmenite phase when annealed at 700 degrees C; segregation of Sn3O4 was also observed. Since sheet resistance of thin films increases after annealing treatments, amorphous thin film was selected for future applications. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:2739 / 2744
页数:6
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