Influence of an electric field and a high excitation density on the luminescence of epitaxial GaN films

被引：1

作者：

Yakobson, MA ^{[1
]}

Nel'son, DK ^{[1
]}

Kalinina, EV ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 1998年 / 40卷 / 05期

关键词：

Spectroscopy; Recombination; Applied Voltage; Luminescence Spectrum; Thickness Variation;

D O I：

10.1134/1.1130426

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence on the recombination luminescence spectra of a field applied to the Schottky barrier and a high excitation density GaN epitaxial films grown by metalorganic chemical-vapor deposition (MOCVD) is investigated. It is discovered that quenching of the luminescence takes place under a reverse bias, while an increase in its intensity occurs under a forward bias. The effect observed is attributed to thickness variation of the space-charge layer under the effects of the applied voltage. The appearance of a new band caused by exciton-exciton collisions is observed under the conditions of a high excitation density. (C) 1998 American Institute of Physics.

引用

页码：862 / 863

页数：2