Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system

被引：357

作者：

Matsumoto, K ^{[1
]}

Ishii, M ^{[1
]}

Segawa, K ^{[1
]}

Oka, Y ^{[1
]}

Vartanian, BJ ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 01期

关键词：

D O I：

10.1063/1.116747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The single electron transistor(SET) is fabricated using the scanning tunneling microscope (STM) as a fabrication process, and the fabricated SET operates at room temperature. Using the STM tip as a cathode, the surface of the titanium metal can be oxidized, and the few tens of nanometer wide oxidized titanium line can be made. The small island region of the SET of similar to 30X similar to 35 nm(2) is formed by the oxidized titanium Line. The Coulomb staircase of 150 mV period is observed in the current-voltage characteristics of the SET at room temperature. (C) 1996 American Institute of Physics.

引用

页码：34 / 36

页数：3