Incorporation of potassium at CuPc/C60 interface for photovoltaic application

被引：9

作者：

Shih, Chuan-Feng ^{[1
]}

Hung, Kuang-Teng ^{[1
]}

Chen, Hui-Ju ^{[1
]}

Hsiao, Chu-Yun ^{[1
]}

Huang, Kuan-Ta ^{[1
]}

Chen, Szu-Hung ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Nano Device Labs, Hsinchu 30078, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 11期

关键词：

ENERGY-LEVEL ALIGNMENT; METAL;

D O I：

10.1063/1.3568884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter demonstrates the effect of potassium (K) doping at the donor-acceptor interface of CuPc/C-60-based organic solar cells. Power conversion efficient (PCE) doubled when a little K was doped into the CuPc/C-60 interface and the device was postannealed (75 degrees C, 10 min). Changes in binding energies, depletion capacitance, and mobilities of electrons and holes were investigated. The marked improvement of PCE arose mostly from the increase in short-circuit current, owing to the modified charge transfer process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3568884]

引用

页数：3

共 22 条

[1] Electric-field and temperature dependence of the hole mobility in poly(p-phenylene vinylene) [J].