Simulation design of electrical capacitance tomography sensors

被引：42

作者：

Olmos, A. Martinez ^{[1
]}

Primicia, J. Alberdi

Marron, J. L. Fernandez

机构：

[1] Univ Granada, ETSI Informat, E-18071 Granada, Spain

[2] CIEMAT, E-28040 Madrid, Spain

[3] Univ Nacl Educ Distancia, ETSI Informat, Madrid 28040, Spain

来源：

IET SCIENCE MEASUREMENT & TECHNOLOGY | 2007年 / 1卷 / 04期

关键词：

D O I：

10.1049/iet-smt:20060108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

The resolution and sensing field of electrical capacitance tomography sensors depends upon the configuration of their electrodes and guards, so optimum design is essential in order to provide improved response. Simulations in 2D and 3D are performed based on the finite element method to study the influence of the electrode, guard size and screen arrangement on the sensor characteristics and the reconstructed image.

引用

页码：216 / 223

页数：8

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