Sputter deposition of TiNi, TiNiPd and TiPd films displaying the two-way shape-memory effect

被引：112

作者：

Quandt, E ^{[1
]}

Halene, C ^{[1
]}

Holleck, H ^{[1
]}

Feit, K ^{[1
]}

Kohl, M ^{[1
]}

Schlossmacher, P ^{[1
]}

Skokan, A ^{[1
]}

Skrobanek, KD ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM KARLSRUHE GMBH,INST MIKROSTRUKTURTECH,D-76021 KARLSRUHE,GERMANY

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1996年 / 53卷 / 1-3期

关键词：

shape-memory effect; smart materials; sputter deposition; Ti(Ni; Pd); films;

D O I：

10.1016/0924-4247(96)01147-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TiNi, TiNTiPd and TiPd films exhibiting the one-way and two-way shape-memory effect have been prepared by d.c, magnetron sputtering onto unheated substrates followed by annealing and training processes. In the case of TiNi, films could be prepared showing the R-phase transition, the important feature of which is its small hysteresis of about 1 K. By the Ni-Pd substitution the transition temperatures (austenite/ martensite finish temperatures) could be increased from 32 degrees C/-38 degrees C for the binary NiTi alloy to a maximum of 570 degrees C/498 degrees C for TiPd films. The films have been subject to further microstructuring for developing micro-actuators displaying the two-way shape-memory effect.

引用

页码：434 / 439

页数：6

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