Irradiance-dependence and translation of the I-V characteristics of crystalline silicon solar cells

被引：22

作者：

Hishikawa, Y ^{[1
]}

Imura, Y ^{[1
]}

Oshiro, T ^{[1
]}

机构：

[1] Japan Qual Assurance Org, Hamamatsu, Shizuoka 4311207, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916169

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The current-voltage characteristics I-out(V) of crystalline silicon (c-Si) solar cells are experimentally investigated at various irradiance E. Its dependence on E can be well approximated by the sum of a dark current and a voltage-dependent "photocurrent", which is proportional to E. These results are used to develop translation equations. It is demonstrated that the resulting formula is able to calculate the I-out(V) of c-Si solar cells at any E from experimental I-out(V) at two different Es, with comparable or better accuracy than the conventional procedure based on the shifted approximation. The present procedure is straightforward, and does not require correction for the series resistance. The same procedure is valid for various solar cells including a-Si, thin-film crystalline silicon, and CdTe.

引用

页码：1464 / 1467

页数：4

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