Polishing and surface characterization of SiC substrates

被引：29

作者：

Everson, WJ ^{[1
]}

Snyder, DW ^{[1
]}

Heydemann, VD ^{[1
]}

机构：

[1] II VI Inc, Saxonburg, PA 16056 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

annealing; CMP; KOH etching; polishing; substrate flatness; surface roughness;

D O I：

10.4028/www.scientific.net/MSF.338-342.837

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 Angstrom and peak-to-valley variations (PV) below 55 Angstrom. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.

引用

页码：837 / 840

页数：4

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