CdTe:CdCl2:O2 annealing process

被引：26

作者：

Hiie, J ^{[1
]}

机构：

[1] Tallinn Univ Technol, Dept Mat Technol, EE-19086 Tallinn, Estonia

来源：

THIN SOLID FILMS | 2003年 / 431卷

关键词：

CdTe; native oxides; CdCl2; anneal; solar cell;

D O I：

10.1016/S0040-6090(03)00205-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One of the key problems of CdCl2:O-2 annealing of CdTe absorber layers in the low temperature region between 350 and 450 degreesC is the activation mechanism of CdTe transport, i.e. by activation of surface diffusion and/or by a liquid melted solution. However, indirect experimental results indicated the presence of liquid phase formation. The activation mechanism of mass transport by oxy-chloride heat treatment has been treated as a surface diffusion process. In this work we present differential thermal analysis studies of prefused compositions of CdTe-CdCl2 with CdTeO3 recognised as a main oxidation product of CdTe. Behaviour of the CdTe-CdTeO3-CdCl2 phases under vacuum annealing has been tested. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：90 / 93

页数：4

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