Low temperature poly-Si TFT - Electrophoretic displays (TFT-EPDs) with four level gray scale

被引：27

作者：

Inoue, S ^{[1
]}

Sadao, K ^{[1
]}

Ozawa, T ^{[1
]}

Kobashi, Y ^{[1
]}

Kawai, H ^{[1
]}

Kitagawa, T ^{[1
]}

Shimoda, T ^{[1
]}

机构：

[1] Seiko Epson Corp, Base Technol Res Ctr, Nagano 3990293, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to realize low power consumption and high resolution displays, we have investigated electrophoretic displays (EPDs) combined with low temperature (less than or equal to 425 degreesC) polycrystalline-silicon thin film transistors (poly-Si TFTs). The electrophoretic microcapsule layer was coated on TFT array. As a result, we could successfully fabricate quarter VGA reflective type displays with bistability, wide-viewing angle and an 18 V operation. In addition, four level gray scale images were also obtained using an area ratio gray scale (ARG) driving method.

引用

页码：197 / 200

页数：4